2 nanometer nanowire memristors is a breakthrough for low power memory | NextBigFuture.com

University of Massachusetts researchers have successfully made a 2 nanometer individually addressable memristors. It is capable of being mass-produced in conventional fabs. This could be great for neuromorphic computing and AI in general. This should lead to high-density memristor arrays with low power consumption for both memory and unconventional computing applications. There were difficulties in making highly ordered and highly conductive nanoelectrode arrays. They developed “nanofins” which are metallic nanostructures with very high height-to-width ratio. This vastly reduced resistance, as the electrodes. Nature Nanotechnology – Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension Abstract The memristor is a The post 2 nanometer nanowire memristors is a breakthrough for low power memory appeared first on NextBigFuture.com.